Dual-layer channel transistor and methods of forming same

ABSTRACT

A transistor device and method of making the same, the transistor device including: a substrate; a word line disposed on the substrate; a gate insulating layer disposed on the word line; a dual-layer semiconductor channel including: a first channel layer disposed on the gate insulating layer; and a second channel layer disposed on the first channel layer, such that the second channel layer contacts side and top surfaces of the first channel layer; and source and drain electrodes electrically coupled to the second channel layer. When a voltage is applied to the word line, the first channel layer has a first electrical resistance and the second channel layer has a second electrical resistance that is different from the first electrical resistance.

RELATED APPLICATIONS

This application claims priority to U.S. Provisional Patent ApplicationNo. 63/042,581 entitled “Formation of multi GX FET”, filed on Jun. 23,2020, the entire contents of which are hereby incorporated by referencefor all purposes.

BACKGROUND

In the semiconductor industry, there is constant desire to increase theareal density of integrated circuits. To do so, individual transistorshave become increasingly smaller. However, the rate at which individualtransistors may be made smaller is slowing. Moving peripheraltransistors from the front-end-of-line (FEOL) to the back-end-of Line(BEOL) of fabrication may be advantageous because functionality may beadded at the BEOL while valuable chip area may be made available in theFEOL. Transistors that use oxide semiconductors are an attractive optionfor BEOL integration because such transistors may be processed at lowtemperatures and thus, will not damage previously fabricated devices.For example, thin-film transistors (TFTs) often use oxide semiconductormaterials.

Various memory cell elements (e.g., magneto-resistive random-accessmemory (MRAM), resistive random-access memory (RRAM or ReRAM)) mayutilize a transistor to select or energize the memory cell. However,CMOS transistors used as select transistor may limit the device densityof memory cell elements as the size of CMOS transistors may be limiting.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A is a vertical cross-sectional view of a first exemplarystructure prior to formation of an array of transistors according to anembodiment of the present disclosure.

FIG. 1B is a vertical cross-sectional view of the first exemplarystructure during formation of the array of transistors according to anembodiment of the present disclosure.

FIG. 1C is a vertical cross-sectional view of the first exemplarystructure after formation of upper-level metal interconnect structuresaccording to an embodiment of the present disclosure.

FIG. 2A is a vertical cross-sectional views illustrating an intermediatestructure of an embodiment transistor after a dielectric is depositedover a substrate.

FIG. 2B is a vertical cross-sectional views illustrating an intermediatestructure of an embodiment transistor after the formation of a word linetrench in the dielectric deposited over the substrate.

FIG. 2C is a vertical cross-sectional views illustrating an intermediatestructure of an embodiment transistor after the deposition of metallicfill material in a word line trench to form a word line.

FIG. 2D is a vertical cross-sectional views illustrating an intermediatestructure of an embodiment transistor after the deposition of gatedielectric layer and a first channel material over the word line andfirst dielectric layer.

FIG. 2E is a vertical cross-sectional views illustrating an intermediatestructure of an embodiment transistor after the patterning of the firstchannel material to form a first channel layer.

FIG. 2F is a vertical cross-sectional views illustrating an intermediatestructure of an embodiment transistor after depositing a second channelmaterial over the first channel layer and gate dielectric layer.

FIG. 2G is a vertical cross-sectional views illustrating an intermediatestructure of an embodiment transistor after the patterning of the secondchannel material to form a second channel layer.

FIG. 2H is a vertical cross-sectional views illustrating an intermediatestructure of an embodiment transistor after the deposition of a seconddielectric layer over the second channel layer and the gate dielectriclayer.

FIG. 2I is a vertical cross-sectional views illustrating an intermediatestructure of an embodiment transistor after the forming of active regionelectrode via cavities in the second dielectric layer.

FIG. 2J is a vertical cross-sectional views illustrating an embodimenttransistor after the forming of active region electrodes in activeregion electrode via cavities.

FIG. 3A is top semi-transparent view of a transistor, according to afirst embodiment of the present disclosure.

FIG. 3B is a vertical cross-sectional view of a transistor taken alongline A-A′ of FIG. 3A according to various embodiments of the presentdisclosure.

FIG. 4A is a vertical cross-sectional views illustrating an intermediatestructure of a transistor according to another embodiment after thedeposition of gate dielectric layer and a first channel material overthe word line and first dielectric layer.

FIG. 4B is a vertical cross-sectional views illustrating an intermediatestructure of a transistor according to another embodiment after thepatterning of the first channel material to form a first channel layer.

FIG. 4C is a vertical cross-sectional views illustrating an intermediatestructure of a transistor according to another embodiment afterdepositing a second channel material over the first channel layer andgate dielectric layer.

FIG. 4D is a vertical cross-sectional views illustrating an intermediatestructure of a transistor according to another embodiment after thepatterning of the second channel material to form a second channellayer.

FIG. 4E is a vertical cross-sectional views illustrating an intermediatestructure of a transistor according to another embodiment after thedeposition of a second dielectric layer over the second channel layerand the gate dielectric layer.

FIG. 4F is a vertical cross-sectional views illustrating an intermediatestructure of a transistor according to another embodiment after theforming of active region electrode via cavities in the second dielectriclayer.

FIG. 4G is a vertical cross-sectional views illustrating a transistoraccording to another embodiment after the forming of active regionelectrodes in active region electrode via cavities.

FIG. 5A is top semi-transparent view of a transistor 500, according tovarious embodiments of the present disclosure.

FIG. 5B is a vertical cross-sectional view of a transistor taken alongline A-A′ of FIG. 5A according to various embodiments of the presentdisclosure.

FIG. 6A is top semi-transparent view of a transistor 600, according tovarious embodiments of the present disclosure.

FIG. 6B is a vertical cross-sectional view of a transistor taken alongline A-A′ of FIG. 6A, according to various embodiments of the presentdisclosure.

FIG. 7A is top semi-transparent view of a transistor 700, according tovarious embodiments of the present disclosure.

FIG. 7B is a vertical cross-sectional view of a transistor taken alongline A-A′ of FIG. 7A, according to various embodiments of the presentdisclosure.

FIG. 8 is a flow diagram of a method of forming a dual-layered channeltransistor, according to various embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. Unless explicitly statedotherwise, each element having the same reference numeral is presumed tohave the same material composition and to have a thickness within a samethickness range. As used herein, the terms “substantially” and “about”refer to a variation of +/−5%.

The present disclosure is directed to semiconductor devices, andspecifically to dual layered channel transistor devices and methods offorming the same.

Memory devices include a grid of independently functioning memory cellsformed on a substrate. Memory devices may include volatile memory cellsor nonvolatile (NV) memory cells. Emerging memory technologies seek tostore more data at less cost than the expensive-to-build silicon chipsused by popular consumer electronics. Such emerging memory devices maybe used to replace existing memory technologies such as flash memory innear future. While existing resistive random-access memories havegenerally been adequate for their intended purposes, as devicescaling-down continues, they have not been entirely satisfactory in allrespects.

In some memory devices, CMOS transistors may be used as the selectingtransistor. However, size limitation of the CMOS transistor technologymay be the limiting factor in improving the size and memory cell densityof memory devices. The various embodiments described herein provideimproved transistors, for example, thin-film transistors (TFTs) whichmay be used as selecting transistors in various devices. The improvedtransistors of the various embodiments may include a dual layeredchannel, wherein the semiconductor materials used in the two channellayers may provide different resistances to improve channel mobility andto mitigate against parasitic resistance.

Referring to FIG. 1A, a first exemplary structure according to anembodiment of the present disclosure is illustrated prior to formationof an array of memory structures, according to various embodiments ofthe present disclosure. The first exemplary structure includes asubstrate 8 that contains a semiconductor material layer 10. Thesubstrate 8 may include a bulk semiconductor substrate such as a siliconsubstrate in which the semiconductor material layer continuously extendsfrom a top surface of the substrate 8 to a bottom surface of thesubstrate 8, or a semiconductor-on-insulator layer including thesemiconductor material layer 10 as a top semiconductor layer overlying aburied insulator layer (such as a silicon oxide layer). The exemplarystructure may include various devices regions, which may include amemory array region 50 in which at least one array of non-volatilememory cells may be subsequently formed.

For example, the at least one array of non-volatile memory cells mayinclude resistive random-access memory (RRAM or ReRAM),magnetic/magneto-resistive random-access memory (MRAM), ferroelectricrandom-access memory (FeRAM), and phase-change memory (PCM) devices. Theexemplary structure may also include a peripheral logic region 52 inwhich electrical connections between each array of non-volatile memorycells and a peripheral circuit including field effect transistors may besubsequently formed. Areas of the memory array region 50 and the logicregion 52 may be employed to form various elements of the peripheralcircuit.

Semiconductor devices such as field effect transistors (FETs) may beformed on, and/or in, the semiconductor material layer 10 during a FEOLoperation. For example, shallow trench isolation structures 12 may beformed in an upper portion of the semiconductor material layer 10 byforming shallow trenches and subsequently filling the shallow trencheswith a dielectric material such as silicon oxide. Other suitabledielectric materials are within the contemplated scope of disclosure.Various doped wells (not expressly shown) may be formed in variousregions of the upper portion of the semiconductor material layer 10 byperforming masked ion implantation processes.

Gate structures 20 may be formed over the top surface of the substrate 8by depositing and patterning a gate dielectric layer, a gate electrodelayer, and a gate cap dielectric layer. Each gate structure 20 mayinclude a vertical stack of a gate dielectric 22, a gate electrode 24,and a gate cap dielectric 28, which is herein referred to as a gatestack (22, 24, 28). Ion implantation processes may be performed to formextension implant regions, which may include source extension regionsand drain extension regions. Dielectric gate spacers 26 may be formedaround the gate stacks (22, 24, 28). Each assembly of a gate stack (22,24, 28) and a dielectric gate spacer 26 constitutes a gate structure 20.Additional ion implantation processes may be performed that use the gatestructures 20 as self-aligned implantation masks to form deep activeregions. Such deep active regions may include deep source regions anddeep drain regions. Upper portions of the deep active regions mayoverlap with portions of the extension implantation regions. Eachcombination of an extension implantation region and a deep active regionmay constitute an active region 14, which may be a source region or adrain region depending on electrical biasing. In some embodiments, theactive regions 14 may be epitaxially grown. A semiconductor channel 15may be formed underneath each gate stack (22, 24, 28) between aneighboring pair of active regions 14. Metal-semiconductor alloy regions18 may be formed on the top surface of each active region 14. Fieldeffect transistors may be formed on the semiconductor material layer 10.Each field effect transistor may include a gate structure 20, asemiconductor channel 15, a pair of active regions 14 (one of whichfunctions as a source region and another of which functions as a drainregion), and optional metal-semiconductor alloy regions 18.Complementary metal-oxide-semiconductor (CMOS) circuits 75 may beprovided on the semiconductor material layer 10, which may include aperiphery circuit for the array(s) of transistors to be subsequentlyformed.

Various interconnect-level structures may be subsequently formed, whichmay be formed prior to formation of an array of selector field effecttransistors and are herein referred to as lower interconnect-levelstructures (L0, L1, L2). In embodiments in which a two-dimensional arrayof transistors may be subsequently formed over two levels ofinterconnect-level metal lines, the lower interconnect-level structures(L0, L1, L2) may include a contact-level structure L0, a firstinterconnect-level structure L1, and a second interconnect-levelstructure L2. The contact-level structure L0 may include a planarizationdielectric layer 31A including a planarizable dielectric material suchas silicon oxide and various contact via structures 41V contacting arespective one of the active regions 14 or the gate electrodes 24 andformed within the planarization dielectric layer 31A. The firstinterconnect-level structure L1 includes a first interconnect leveldielectric layer 31B and first metal lines 41L formed within the firstinterconnect level dielectric layer 31B. The first interconnect leveldielectric layer 31B is also referred to as a first line-leveldielectric layer. The first metal lines 41L may contact a respective oneof the contact via structures 41V. The second interconnect-levelstructure L2 includes a second interconnect level dielectric layer 32,which may include a stack of a first via-level dielectric material layerand a second line-level dielectric material layer or aline-and-via-level dielectric material layer. The second interconnectlevel dielectric layer 32 may have formed there within secondinterconnect-level metal interconnect structures (42V, 42L), whichincludes first metal via structures 42V and second metal lines 42L. Topsurfaces of the second metal lines 42L may be coplanar with the topsurface of the second interconnect level dielectric layer 32.

Referring to FIG. 1B, an array 95 of non-volatile memory cells andtransistor selector devices may be formed in the memory array region 50over the second interconnect-level structure L2. The details for thestructure and the processing steps for the array 95 of non-volatilememory cells and transistor selector devices are subsequently describedin detail below. A third interconnect level dielectric layer 33 may beformed during formation of the array 95 of non-volatile memory cells andtransistor selector devices. The set of all structures formed at thelevel of the array 95 of non-volatile memory cells and transistorselector devices transistors is herein referred to as a thirdinterconnect-level structure L3.

Referring to FIG. 1C, third interconnect-level metal interconnectstructures (43V, 43L) may be formed in the third interconnect leveldielectric layer 33. The third interconnect-level metal interconnectstructures (43V, 43L) may include second metal via structures 43V andthird metal lines 43L. Additional interconnect-level structures may besubsequently formed, which are herein referred to as upperinterconnect-level structures (L4, L5, L6, L7). For example, the upperinterconnect-level structures (L4, L5, L6, L7) may include a fourthinterconnect-level structure L4, a fifth interconnect-level structureL5, a sixth interconnect-level structure L6, and a seventhinterconnect-level structure L7. The fourth interconnect-level structureL4 may include a fourth interconnect level dielectric layer 34 havingformed therein fourth interconnect-level metal interconnect structures(44V, 44L), which may include third metal via structures 44V and fourthmetal lines 44L. The fifth interconnect-level structure L5 may include afifth interconnect level dielectric layer 35 having formed therein fifthinterconnect-level metal interconnect structures (45V, 45L), which mayinclude fourth metal via structures 45V and fifth metal lines 45L. Thesixth interconnect-level structure L6 may include a sixth interconnectlevel dielectric layer 36 having formed therein sixth interconnect-levelmetal interconnect structures (46V, 46L), which may include fifth metalvia structures 46V and sixth metal lines 46L. The seventhinterconnect-level structure L7 may include a seventh interconnect leveldielectric layer 37 having formed therein sixth metal via structures 47V(which are seventh interconnect-level metal interconnect structures) andmetal bonding pads 47B. The metal bonding pads 47B may be configured forsolder bonding (which may employ C4 ball bonding or wire bonding), ormay be configured for metal-to-metal bonding (such as copper-to-copperbonding).

Each interconnect level dielectric layer may be referred to as aninterconnect level dielectric layer (ILD) layer 30. Eachinterconnect-level metal interconnect structure may be referred to as ametal interconnect structure 40. Each contiguous combination of a metalvia structure and an overlying metal line located within a sameinterconnect-level structure (L2-L7) may be formed sequentially as twodistinct structures by employing two single damascene processes, or maybe simultaneously formed as a unitary structure employing a dualdamascene process. Each of the metal interconnect structure 40 mayinclude a respective metallic liner (such as a layer of TiN, TaN, or WNhaving a thickness in a range from 2 nm to 20 nm) and a respectivemetallic fill material (such as W, Cu, Co, Mo, Ru, other elementalmetals, or an alloy or a combination thereof). Other suitable materialsfor use as a metallic liner and metallic fill material are within thecontemplated scope of disclosure. Various etch stop dielectric layersand dielectric capping layers may be inserted between verticallyneighboring pairs of ILD layers 30, or may be incorporated into one ormore of the ILD layers 30.

While the present disclosure is described employing an embodiment inwhich the array 95 of non-volatile memory cells and transistor selectordevices may be formed as a component of a third interconnect-levelstructure L3, in some embodiments the array 95 of non-volatile memorycells and transistor selector devices may be formed as components of anyother interconnect-level structure (e.g., L1-L7). Further, while thepresent disclosure is described using an embodiment in which a set ofeight interconnect-level structures are formed, embodiments areexpressly contemplated herein in which a different number ofinterconnect-level structures is used. In addition, embodiments areexpressly contemplated herein in which two or more arrays 95 ofnon-volatile memory cells and transistor selector devices may beprovided within multiple interconnect-level structures in the memoryarray region 50. While the present disclosure is described employing anembodiment in which an array 95 of non-volatile memory cells andtransistor selector devices may be formed in a single interconnect-levelstructure, in some embodiments an array 95 of non-volatile memory cellsand transistor selector devices may be formed over two verticallyadjoining interconnect-level structures. In addition, while variousembodiments of the present disclosure are described below byillustrating the transistor selector devices as thin-film transistors(TFTs), other forms of transistor selector devices are contemplated andmay be formed and used. For example, planar, gate-all-around, and fintransistors as well as other forms of transistors that benefit form adual-layered channel may be formed and used as transistor devices.

Semiconductor transistor device include source and drain electrodes thatcontact a channel and overlap with a gate electrode that is separatedfrom the channel by a gate insulating layer. However, such aconfiguration may result in a current flow path that extends through thebulk of the channel, thereby inducing channel length extension. Inaddition, parasitic resistance may occur where the source and/or drainelectrodes contact the channel. Accordingly, transistor devices, such asTFTs, may have degraded channel mobility, due to increased channelresistance. As such, there is a need for transistors that provide forreduced channel resistance. Various embodiments are disclosed hereinprovide for dual-layered channel transistors that reduce channelresistance and improve channel mobility.

Referring to FIG. 2A, a first dielectric layer 102 may be deposited on asubstrate 100. The substrate 100 may be any suitable substrate, such asa semiconductor substrate, and may include control elements formedduring FEOL processes. The substrate 100 may further be an interconnectlevel dielectric layer such as second interconnect level dielectriclayer 32. The first dielectric layer 102 may be formed of any suitabledielectric material such as silicon oxide (SiO₂), or the like, or high-kdielectric materials such as silicon nitride (SiN₄), hafnium oxide(HfO₂), hafnium silicon oxide (HfSiO), hafnium tantalum oxide (HfTaO),hafnium titanium oxide (HfTiO), hafnium zirconium oxide(Hf_(0.5)Zr_(0.5)O₂), tantalum oxide (Ta₂O₅), aluminum oxide (Al₂O₃),hafnium dioxide-alumina (HfO₂—Al₂O₃), zirconium oxide (ZrO₂), or thelike. Other suitable dielectric materials may also be within thecontemplated scope of disclosure. The first dielectric layer 102 may bedeposited using any suitable deposition process. Herein, suitabledeposition processes may include chemical vapor deposition (CVD),physical vapor deposition (PVD), atomic layer deposition (ALD), highdensity plasma CVD (HDPCVD), metalorganic CVD (MOCVD), plasma enhancedCVD (PECVD), sputtering, laser ablation, or the like.

Referring to FIG. 2B, a photoresist layer 101 may be applied over thefirst dielectric layer 102. The photoresist layer 101 may belithographically patterned to form a line and space pattern thatincludes photoresist material strips that laterally extend along thefirst horizontal direction. An anisotropic etch process may be performedto etch unmasked portions of the first dielectric layer 102. Linetrenches 103 laterally extending along the first horizontal directionmay be formed in areas that are not masked by the photoresist materialstrips. The anisotropic etch process may use any suitable etchingprocess, such as a wet or dry etching process. The photoresist layer 101may be subsequently removed, for example, by ashing.

Referring to FIG. 2C, word lines 110 may be formed in the word linetrenches 103. In particular, an electrically conductive material may bedeposited over the first dielectric layer 102 and fill in word linetrench 103. A planarization process, such as CMP, may then be performedto planarize upper surfaces of the first dielectric layer 102 and theword lines 110, and remove any excess electrically conductive materialfrom the upper surface of the first dielectric layer 102. The word lines110 may be formed of any suitable electrically conductive material,using any suitable deposition method as described herein. These suitabledeposition methods may include chemical vapor deposition (CVD), physicalvapor deposition (PVD), atomic layer deposition (ALD), high densityplasma CVD (HDPCVD), metalorganic CVD (MOCVD), plasma enhanced CVD(PECVD), sputtering, laser ablation, or the like. The word lines 110 maybe formed of any of copper, aluminum, zirconium, titanium, titaniumnitride, tungsten, tantalum, tantalum nitride, ruthenium, palladium,platinum, cobalt, nickel, iridium, alloys thereof, or the like. Othersuitable electrically conductive materials for formation of the wordlines 110 may be within the contemplated scope of disclosure.

Referring to FIG. 2D, a gate dielectric layer 116 and a first channelmaterial 120L may be deposited over the first dielectric layer 102 andthe word lines 110. The gate dielectric material of the gate dielectriclayer 116 may include a gate dielectric material such as silicon oxide,silicon oxynitride, a dielectric metal oxide, or a combination thereof.In some embodiments, the gate dielectric layer 116 may include aferroelectric material, such as PbZr/TiO₃, BaTiO³, PbTiO₃, or the like.However, other suitable dielectric materials are within the contemplatedscope of disclosure. The thickness of the gate dielectric layer 116 maybe in a range from 1 nm to 12 nm, such as from 2 nm to 6 nm, althoughlesser and greater thicknesses may also be used. Generally, gatedielectric layer 116 may be formed on first dielectric layer 102 and theword lines 110. The gate dielectric layer 116 may be formed bydepositing a gate dielectric material on the first dielectric layer 102and the word lines 110.

The first channel material 120L may be deposited using any suitabledeposition process, as described herein. In various embodiments, thefirst channel material 120L may be formed of semiconductor materials,such as polysilicon, amorphous silicon, or a metal oxide semiconductormaterial, such as InGaZnO (IGZO), indium tin oxide (ITO), InWO, InZnO,InSnO, GaO_(x), InO_(x), or the like. The dopant level in the metaloxide semiconductor material may be selected such that leakage currentthrough the metal oxide semiconductor material during device operationis negligible. For example, the dopant level in the metal oxidesemiconductor material may be in a range from 1.0×10¹⁰/cm³ to2.0×10¹⁶/cm³, although lesser and greater dopant concentrations may alsobe used.

The first channel material 120L may be deposited, for example, bychemical vapor deposition. The first channel material 120L may bedeposited as a layer having a uniform thickness throughout, such as athickness ranging from 2 nm to 60 nm, such as from 4 nm to 20 nm,although lesser and greater thicknesses may also be used.

Referring to FIG. 2E, a photoresist layer 101 may be applied over thefirst channel material 120L. The photoresist layer 101 may belithographically patterned to form a line pattern that includesphotoresist material strips that laterally extends along the firsthorizontal direction. An anisotropic etch process may be performed toetch unmasked portions of the first channel material 120L. A firstchannel layer 120 extending along the first horizontal direction may beformed by etching away the unmasked portions of the first channelmaterial 120L. An anisotropic etch process may be performed on the firstchannel material 120L selective to the underlying gate dielectric layer116. The anisotropic etch process may use any suitable etching process,such as a wet or dry etching process. The photoresist layer 101 may besubsequently removed, for example, by ashing.

Referring to FIG. 2F, a second channel material 122H may be conformallydeposited on the first channel layer 120 and the gate insulating layer116. In various embodiments, the second channel material 122H may beformed of semiconductor materials, such as polysilicon, amorphoussilicon, or semiconducting oxides, such as InGaZnO (IGZO), indium tinoxide (ITO), InWO, InZnO, InSnO, GaO_(x), InO_(x), or the like. However,the first and second channel materials 120L, 122H may be formed ofrespective semiconductor materials having different electricalresistances (e.g., different “on” resistances), band gaps, and/orthreshold voltages.

In particular, the second channel material 122H may include any suitablesemiconductor material, so long as the second channel material 122H hasa higher electrical resistance, band gap, and/or threshold voltage thanthe material of the first channel layer 120 (i.e., the first channelmaterial 120L). The second channel material 122H may directly contacttop and side surfaces of the first channel layer 120.

Referring to FIG. 2G, the second channel material 122H may be patternedto form a second channel layer 122. In particular, a patternedphotoresist layer 101 may be formed on the second channel material 122H,and the second channel material 122H may be etched using the photoresistlayer 101 as a mask, using any suitable etching process, such as a wetor dry etching process, to form the second channel layer 122.

In some embodiments, the etching process may optionally include etchingportions of the gate insulating layer 116. In particular, portions ofthe gate insulating layer 116 that are not overlapped with the secondchannel layer 122 may optionally be removed during the etching process.

In various embodiments, the first and second channel layers 120, 122 mayhave different electrical resistances. For example, in some embodiments,the first channel layer 120 may have a lower electrical resistance thanthe second channel layer 122. The first channel layer 120 may be formedof a semiconductor material (e.g. semiconductor material 120L) having alower electrical resistance, band gap, and/or threshold voltage than asemiconductor material (e.g., semiconductor material 122L) of the secondchannel layer 122. In other words, the first channel layer 120 may havea lower electrical resistance than the second channel layer 122, when avoltage is applied to the word line 110. For example, the first channellayer 120 may be formed of poly-Si, InO, ITO, SnO₂, or a first type ofIGZO, and the second channel layer 122 may be formed of Ga₂O₃, GZO, orsecond type of IGZO. The first type of IGZO may have a lower Ga at % ora higher In at % than the second type of IGZO. In some embodiments, thesheet resistance of the first channel layer 120 may range from 1e³Ω/square to 1e⁴ Ω/square, and the sheet resistance of the second channellayer 122 may range from 4e³ Ω/square to 2e⁴ Ω/square. The sheetresistance is related to channel mobility.

Referring to FIG. 2H, a second dielectric layer 106 may be deposited onthe second channel layer 122 and the gate insulating layer 116. Inparticular, the photoresist layer 101 may be removed, for example, byashing, and the second dielectric layer 106 may be formed by depositingany suitable dielectric material, using any suitable deposition process,as described herein.

Referring to FIG. 2I, a photoresist layer 101 may be applied over thesecond dielectric layer 106. The photoresist layer 101 may belithographically patterned to form two openings in the photo resistlayer 101. An anisotropic etching process may be used to form activeregion electrode via cavities 105 in the second dielectric layer 106 andexpose the top surface of second channel layer 122 at the bottom of eachactive region electrode via cavity 105. The anisotropic etch may use anysuitable etching process, such as a wet or dry etching process, to formthe active region electrode via cavities 105. The photoresist layer 101may subsequently be removed, for example, by ashing.

Referring to FIG. 2J, active region (source and drain) electrodes 112,114 may be formed in the active region electrode via cavities 105. Inparticular, an electrically conductive material may be deposited on thesecond dielectric layer 106 and in the active region electrode viacavities 105. A planarization process may then be performed, such asCMP, in order to planarize the upper surfaces of the source electrode112 and drain electrode 114, and the second dielectric layer 106 toremove excess metallic fill material and to form a co-planar top surfaceof the source electrode 112 and drain electrode 114 as well as thesecond dielectric layer 106. A dual-layered channel transistor 200 maybe formed upon the completion of the source electrode 112 and drainelectrode 114.

FIG. 3A is a top plan view with partially transparent layers of adual-layered channel transistor 300, according to various embodiments ofthe present disclosure. The partially transparent layers illustrate thepositioning of particular elements relative to one another in anembodiment dual-layered channel transistor 300. FIG. 3B is acorresponding vertical cross-sectional view taken along line A-A′ ofFIG. 3A. Referring to FIGS. 3A and 3B, the dual-layered channeltransistor 300 may be formed on a semiconductor substrate 100 duringback-end-of-line (BEOL) processing. In particular, the dual-layeredchannel transistor 300 may be included in an interconnect structure of asemiconductor device, as shown in FIGS. 1A-1C. The embodiment transistorcomprises a dual layered channel 125 that comprises a buried firstchannel layer 120. In particular, at least a portion of the firstchannel layer 120 may be embedded in the second channel layer 122. Thefirst channel layer 120 may be formed of a semiconductor or electricallyconductive material that has a lower resistance than second channellayer 122, when a voltage is applied to the word line 110. For example,the first channel layer 120 may comprise poly-Si, InO, ITO, SnO₂, or afirst type of IGZO, and the second channel layer 122 may comprise Ga₂O₃,GZO, or second type of IGZO. The first type of IGZO may have a lower Gaat % or a higher In at % than the second type of IGZO. In someembodiments, the sheet resistance of the first channel layer 120 mayrange from 1e³ Ω/square to 1e⁴ Ω/square. For example, the first channellayer 120 may be electrically conductive and comprise a metal such ascopper, aluminum, gold, silver, platinum, alloys thereof, or the like.The sheet resistance of the second channel layer 122 may range from 4e³Ω/square to 2e⁴ Ω/square. The sheet resistance is related to channelmobility.

A source electrode 112 and a drain electrode 114 may be disposed on thedual layered channel 125. In particular, the source electrode 112 may beelectrically coupled to a source region of the dual-layered channel 125,and the drain electrode 114 may be electrically coupled to a drainregion of the dual-layered channel 125. The source electrode 112 anddrain electrode 114 may be formed of any suitable electricallyconductive material, as described herein.

The word line 110 may have a width G that is greater than a width W ofthe first channel layer 120. Accordingly, the first channel layer 120may be completely overlapped with the word line 110, in a verticaldirection (e.g., a direction perpendicular to a plane of the substrate100). The portion of the word line 110 that is overlapped with thedual-layered channel 125 may operate as a gate electrode of thetransistor 300.

The source electrode 112 and drain electrode 114 may be separated fromone another by a channel width C. The channel width C may be less thanthe width G of the word line 110, such that the source electrode 112 anddrain electrode 114 overlap opposing portions of the word line 110. Insome embodiments, the channel width C may be less than the width W ofthe first channel layer 120. As such, the source electrode 112 and drainelectrode 114 may vertically overlap opposing portions of the firstchannel layer 120, and opposing portions of the word line 110. However,in some embodiments, the channel width C may be greater than the width Wof the first channel layer 120 and may be less than the width G of theword line 110. As such, the source electrode 112 and drain electrode 114may vertically overlap only with opposing portions of the word line 110.

In operation, when a gate voltage is applied to the word line 110,current may flow through the dual-layered channel 125, from the sourceelectrode 112 to the drain electrode 114. In particular, as currentpasses through the dual-layered channel 125, at least some of thecurrent may preferentially flow through the first channel layer 120, dueto the first channel layer 120 having a lower resistance than the secondchannel layer 122. In other words, current may flow from the sourceelectrode 112, into a first region 122S (e.g., source region) of thesecond channel layer 122, through the width W of the first channel layer120, and into a second region 122D (e.g., drain region) of the secondchannel layer 122, before flowing into the drain electrode 114, as shownby the dashed arrow of FIG. 3B.

Accordingly, the first channel layer 120 may be configured to reduce thetotal channel resistance of transistor 200, since the first channellayer 120 provides a lower resistance path for current flow, as comparedto the second channel layer 122. In addition, since the current flowsthrough a source region section 122S of the second channel layer 122 anda drain region 122D section of the second channel layer 122, beforeentering and after exiting the first channel layer 120, the sourceregion 122S, and drain region 122D of the second channel layer 122 mayoperate as current control regions, since the threshold voltage of thesecond channel layer 122 may be higher than the threshold voltage of thefirst channel layer 120. Thus, the total resistance (R_(total)) of theeffective channel may be the various resistances in series representedby:R_(total)=R_(channel_source_112)+(R_(second channel source region 122S)+R_(first channel layer 120)+R_(second channel drain region 122D))+R_(channel_drain 114).The total resistance may be reduced by including the lower resistancematerial of the first channel layer 120. The threshold voltage V_(th)may be defined by the energy gap (E_(g)) of the second channel layer 122material that has the higher energy gap as compared to the energy gap ofthe first channel layer 120 material.

In another embodiment and with reference to FIGS. 4A-4G, a dual-layeredchannel transistor 400 may be formed using the same process steps asillustrated in FIGS. 2A-2J. As noted above, in the dual-layered channeltransistor 300, the second channel layer 122 may be formed with amaterial having a higher resistance than the material used to form firstchannel layer 120. However, with reference to dual-layered channeltransistor 400 illustrated in FIG. 5B, unlike the dual-layered channel125 of the dual-layered channel transistor 300, the first channel layer120 of the dual-layered channel 125A may have a higher electricalresistance, band gap, and/or threshold voltage than the second channellayer 122. For example, in the dual-layered channel transistor 400, thefirst channel layer 120 and second channel layer 122 may be formed ofsemiconductor materials, such that the first channel layer 120 has ahigher electrical resistance, band gap, and/or threshold voltage thanthe second channel layer 122.

In some embodiments, the second channel layer 122 may be formed of asemiconductor material, while the first channel layer 120 may be formedof resistive material having a higher electrical resistance than thesemiconductor material of the second channel layer 122, when a voltageis applied to the word line 110.

FIGS. 4A-4G are vertical cross-sectional views showing various steps formanufacturing a dual-layered channel transistor 400, according tovarious embodiments of the present disclosure. Referring to FIG. 4A, agate dielectric layer 116 and a first channel material 120H may bedeposited over the first dielectric layer 102 and the word lines 110 ofan intermediate structure as shown in FIG. 2C. The gate dielectricmaterial of the gate dielectric layer 116 may include a gate dielectricmaterial such as silicon oxide, silicon oxynitride, a dielectric metaloxide, or a combination thereof. Other suitable dielectric materials arewithin the contemplated scope of disclosure. The thickness of the gatedielectric layer 116 may be in a range from 1 nm to 12 nm, such as from2 nm to 6 nm, although lesser and greater thicknesses may also be used.Generally, gate dielectric layer 116 may be formed on first dielectriclayer 102 and the word lines 110. The gate dielectric layer 116 may beformed by depositing a gate dielectric material on the first dielectriclayer 102 and the word lines 110.

The first channel material 120H may be deposited using any suitabledeposition process, as described herein. In various embodiments, thefirst channel material 120H may be formed of semiconductor materials,such as polysilicon, amorphous silicon, or a metal oxide semiconductormaterial, such as InGaZnO (IGZO), indium tin oxide (ITO), InWO, InZnO,InSnO, GaO_(x), InO_(x), or the like. The dopant level in the metaloxide semiconductor material may be selected such that leakage currentthrough the metal oxide semiconductor material during device operationis negligible. For example, the dopant level in the metal oxidesemiconductor material may be in a range from 1.0×10¹⁰/cm³ to2.0×10¹⁶/cm³, although lesser and greater dopant concentrations may alsobe used.

The first channel material 120H may be deposited, for example, bychemical vapor deposition. The first channel material 120H may be alayer having a uniform thickness throughout, such as a thickness rangingfrom 2 nm to 60 nm, such as from 4 nm to 20 nm, although lesser andgreater thicknesses may also be used.

Referring to FIG. 4B, a photoresist layer 101 may be applied over thefirst channel material 120H. The photoresist layer 101 may belithographically patterned to form a line pattern that includesphotoresist material strips that laterally extends along the firsthorizontal direction. An anisotropic etch process may be performed toetch unmasked portions of the first channel material 120H. A channellayer 120 extending along the first horizontal direction may be formedby etching away the unmasked portions of the first channel material120H. An anisotropic etch process may be performed on the first channelmaterial 120H selective to the underlying gate dielectric layer 116. Theanisotropic etch process may use any suitable etching process, such as awet or dry etching process. The photoresist layer 101 may besubsequently removed, for example, by ashing.

Referring to FIG. 4C, a second channel material 122L may be conformallydeposited on the first channel layer 120 and the gate insulating layer116. In various embodiments, the second channel material 122L may beformed of semiconductor materials, such as polysilicon, amorphoussilicon, or semiconducting oxides, such as InGaZnO (IGZO), indium tinoxide (ITO), InWO, InZnO, InSnO, GaOx, InOx, or the like. However, thefirst and second channel materials 120H, 122L may be formed ofrespective semiconductor materials having different electricalresistances (e.g., different “on” resistances), band gaps, and/orthreshold voltages.

In particular, the second channel material 122L may be deposited usingany suitable deposition method and any suitable semiconductor material,so long as the second channel material 122L has a lower electricalresistance, band gap, and/or threshold voltage than the material of thefirst channel layer 120 (i.e., the first channel material 120H). Thesecond channel material 122L may directly contact top and side surfacesof the first channel layer 120.

In various embodiments, the first and second channel materials 120H,122L may have different electrical resistances, band gaps, and/orthreshold voltages. For example, in some embodiments, the first channelmaterial 120H may have a higher electrical resistance than the secondchannel material 122L.

Referring to FIG. 4D, the second channel material 122L may be patternedto form a second channel layer 122. In particular, a patternedphotoresist layer 101 may be formed on the second channel material 122L,and the second channel material 122L may be etched using the photoresistlayer 101 as a mask, using any suitable etching process, such as a wetor dry etching process, to form the second channel layer 122.

In some embodiments, the etching process may optionally include etchingportions of the gate insulating layer 116. In particular, portions ofthe gate insulating layer 116 that are not overlapped with the secondchannel layer 122 may optionally be removed during the etching process.

The first channel layer 120 may have a higher electrical resistance thanthe second channel layer 122, when a voltage is applied to the word line110. For example, the first channel layer 120 may comprise amorphoussilicon, Ga₂O₃, GZO, or a second type of IGZO, and the second channellayer 122 may comprise poly-Si, InO, ITO, SnO₂, or a first type of IGZO,wherein the second type of IGZO has a higher Ga at % or a lower In at %than the first type of IGZO. In some embodiments, the sheet resistanceof the first channel layer 120 may range from 4e³ Ω/square to 2e⁴Ω/square and the sheet resistance of the second channel layer 122 mayrange from 1e³ Ω/square to 1e⁴ Ω/square.

Referring to FIG. 4E, a second dielectric layer 106 may be deposited onthe second channel layer 122 and the gate insulating layer 116. Inparticular, the photoresist layer 101 may be removed, for example, byashing, and the second dielectric layer 106 may be formed by depositingany suitable dielectric material, using any suitable deposition process,as described herein.

Referring to FIG. 4F, a photoresist layer 101 may be applied over thesecond dielectric layer 106. The photoresist layer 101 may belithographically patterned to form two openings in the photoresist layer101. An anisotropic etching process may be used to etch the seconddielectric layer 106 to form active region electrode via cavities 105 inthe second dielectric layer 106 and expose a top surface of secondchannel layer 122 at the bottom of each active region electrode viacavity 105. The anisotropic etch may use any suitable etching process,such as a wet or dry etching process, to form the active regionelectrode via cavities 105. The photoresist layer 101 may subsequentlybe removed, for example, by ashing.

Referring to FIG. 4G, active region (source and drain) electrodes 112,114 may be formed in the active region electrode via cavities 105. Inparticular, an electrically conductive material may be deposited on thesecond dielectric layer 106 and in the active region electrode viacavities 105. A planarization process may then be performed, such asCMP, in order to planarize the upper surfaces of the source electrode112 and drain electrode 114, as well as the second dielectric layer 106to remove excess metallic fill material and to form a co-planar topsurface of the source electrode 112, drain electrode 114 and the seconddielectric layer 106. A dual-layered channel transistor 400 may beformed upon the completion of the source electrode 112 and drainelectrode 114.

FIG. 5A is a top semi-transparent plan view of a dual-layered channeltransistor 500, according to various embodiments of the presentdisclosure. FIG. 5B is a vertical cross-sectional view taken along lineA-A′ of FIG. 5A. Referring to FIGS. 5A and 5B, the dual-layered channeltransistor 500 may include a dual-layer channel 125A disposed betweenthe gate insulating layer 116, the source electrode 112 and drainelectrode 114. The dual-layered channel 125A may include a first channellayer 120 and a second channel layer 122 covering top and side surfacesof the first channel layer 120.

A channel width C, taken between the source electrode 112 and drainelectrode 114, may be less than a width W of the first channel layer120. The width W of the first channel layer 120 may be less than a widthG of the word line 110. The source electrode 112 and drain electrode 114may vertically overlap with opposing portions of the word line 110. Insome embodiments, the source and drain electrodes 112, 114 may alsovertically overlap with opposing portion first channel layer 120.

During operation of the dual-layered channel transistor 500, when avoltage is applied to the word line 110, a portion of the word line 110disposed below the dual-layered channel 125A may operate as a gateelectrode. In particular, current may flow from the source electrode112, into a source region 122S of the second channel layer 122, across aportion of the second channel layer 122 disposed above the first channellayer 120, and into a drain region 122D of the second channel layer 122,before entering the drain electrode 114, as shown by the dashed arrow.Current may flow preferentially through the second channel layer 122 asopposed as through first channel layer 120, due to the relatively higherelectrical resistance of the first channel layer 120 as compared tosecond channel layer 122. In other words, the first channel layer 120may be configured to shorten a current flow path through thedual-layered channel 125A, since current is directed away from the bulkof the dual-layered channel 125A by the first channel layer 120. Due tothe lower resistance of the second channel 122, more current may flowsthrough the second channel 122 than the first channel 120, as shown bythe dashed line shown. This also can be explained by the Ec band offset.For example, the electron affinity of the second channel 122 is greaterthan the electron affinity of the first channel 120, which indicatesthat charge may be easily accumulated in the second channel 122. Underthis situation, the current tends to flow through the second channel 122first, before flowing through the first channel 120, as the gate voltageis increased. Hence, the resistance of the dual-layered channel 125A maybe reduced. The buried first channel layer 120 may enhance carriermobility to reduce a scattering effect.

FIG. 6A is a top semi-transparent plan view of a dual-layered channeltransistor 600, according to another embodiment of the presentdisclosure. FIG. 6B is a vertical cross-sectional view taken along lineA-A′ of FIG. 6A. The dual-layered channel transistor 600 may be similarto the dual-layered channel transistor 300 illustrated in FIGS. 3A and3B. As such, only the differences there between will be discussed indetail, and like reference numbers refer to like elements.

Referring to FIGS. 6A and 6B, a channel width C between the sourceelectrode 112 and drain electrode 114 of the dual-layered channeltransistor 600 may be larger than the channel width C of thedual-layered channel transistor 300. In other words, the channel width Cmay be larger than the width G of the word line 110. As such, the sourceelectrode 112 and drain electrode 114 may not vertically overlap withthe word line 110 or the first channel layer 120. Within a portion ofthe dual-layered channel 125 above the word line 110, current flow maybe controlled by the gate voltage applied to the word line 110, and thesource electrode 112 and drain electrode 114 are not directly overlappedwith the word line 110. Therefore, the parasitic capacitance in thedual-layered channel 125 adjacent to the source electrode 112 and drainelectrode 114 may be reduced.

FIG. 7A is a top plan view of a dual-layered channel transistor 700,according to another embodiment of the present disclosure. FIG. 7B is avertical cross-sectional view taken along line A-A′ of FIG. 7A. Thedual-layered channel transistor 700 may be similar to the dual-layeredchannel transistors 400, 500 illustrated in FIGS. 4A-5B. As such, onlythe difference there between will be discussed in detail, and likereference numbers refer to like elements.

Referring to FIGS. 7A and 7B, a channel width C between the sourceelectrode 112 and drain electrode 114 of the dual-layered channeltransistor 700 may be larger than the channel width of the dual-layeredchannel transistors 400, 500 illustrated in FIGS. 4A-5B. In other words,the channel width C may be larger than the width G of the word line 110.As such, the source electrode 112 and drain electrode 114 may notvertically overlap with the word line 110 or the first channel layer120.

FIG. 8 is a flow diagram of a method of forming a dual-layered channeltransistors 200, 300, 400, 500, 600 and 700, according to variousembodiments of the present disclosure. With reference to FIG. 8 andFIGS. 2A-7B, in operation 801, a first dielectric layer 102 may bedeposited over a substrate 100. In operation 802, the first dielectriclayer 102 may be patterned to form word line trenches 103. In operation803, a metallic fill material may be deposited over the first dielectriclayer 102 and in the word line trenches 103 to form word line 110. Thefirst dielectric layer 102 and word line 110 may be planarized such thatthe top surface of the first dielectric layer 102 and the word line areco-planar. In operation 804, a gate dielectric layer 116 and firstchannel layer 120 (L/H) material may be sequentially deposited over thefirst dielectric layer 102 and word lines 110. In operation 805, thefirst channel layer 120 (L/H) material may be patterned to form a firstchannel layer 120. In operation 806, a second channel layer 122 (H/L)material may be deposited over the first channel layer 120 and gatedielectric layer 116.

In embodiments to form dual-layered channel transistors 200, 300, and600, the second channel material 122H has a higher electricalresistance, band gap, and/or threshold voltage than the first channelmaterial 120L. In embodiments to form dual-layered channel transistors400, 500, and 700, the second channel material 122L has a lowerelectrical resistance, band gap, and/or threshold voltage than the firstchannel material 120H. In operation 807, the second channel layer 122(H/L) may be patterned to form a second channel layer 122. In operation808, a second dielectric layer 106 may be deposited over the secondchannel layer 122 and gate dielectric layer 116. In operation 809, thesecond dielectric layer 106 may be patterned to form active regionelectrode via cavities 105. In operation 810, a metallic fill materialmay be deposited over the second dielectric layer 106 and in the activeregion electrode via cavities 105 to form source electrode 112 and drainelectrode 114. The second dielectric layer 106 and source and drainelectrodes 112, 114 may be planarized such that the top surface of thesecond dielectric layer 102, the source electrode 112 and the drainelectrode 114 are co-planar.

In various embodiments, operations 809 and 810 may be modified such thatof the active region electrode via cavities 105 may be disposed furtherapart, such that the source electrode 112 and drain electrode 114 areseparated by a channel width C that is greater than the width W of theword lines 110, in order to form the dual-layered channel transistors600 and 700 of FIGS. 6A, 6B and 7A, 7B.

According to various embodiments, provided are transistors that includea dual-layer channel including a low resistance channel layer and a highresistance channel layer. The dual-layer channel may be configured toreduce the overall channel resistance of a dual-layered channeltransistor, by reducing the resistance of at least a portion of thedual-layer channel and/or by reducing the length of a current flow paththrough the dual-layer channel.

Various embodiments provide a dual-layered channel transistors 200, 300,400, 500, 600, 700 that includes a substrate 100; a word line 110disposed on the substrate 100; a gate dielectric layer 116 disposed onthe word line 110; a dual-layer semiconductor channel 125 that includesa first channel layer 120 having a first electrical resistance anddisposed on the gate dielectric layer 116; a second channel layer 122having a second electrical resistance that is different from the firstelectrical resistance and disposed on the first channel layer 120, suchthat the second channel layer 122 contacts side and top surfaces of thefirst channel layer 120; and a source electrode 112 and drain electrode114 that are electrically coupled to the second channel layer 122.

Various embodiments provide method of forming a dual-layered channeltransistors 200, 300, 400, 500, 600, 700 wherein the method includes theoperations of depositing a first dielectric layer 102 on a semiconductorsubstrate 100; forming a word line 110 in the first dielectric layer102; depositing a gate dielectric layer 116 over the word line 110;forming a dual-layer channel 125 on the gate dielectric layer 116 by:depositing a first channel layer 120L having a first electricalresistance on the gate dielectric layer 116; and depositing a secondchannel layer 122 having a second electrical resistance that isdifferent from the first electrical resistance on the first channellayer 120, such that the second channel layer 122 contacts side and topsurfaces of the first channel layer 120. The embodiment method furthercomprising the operations of depositing second dielectric layer 106 onthe second channel layer 122; and forming a source electrode 112 and adrain electrode 114 in the second dielectric layer 106.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art would appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A transistor, comprising: a substrate; a wordline disposed on the substrate; a gate dielectric layer disposed on theword line; a dual-layer semiconductor channel comprising: a firstchannel layer disposed on the gate dielectric layer and having a firstelectrical resistance; and a second channel layer having a secondelectrical resistance and that is disposed on the first channel layersuch that the second channel layer contacts side and top surfaces of thefirst channel layer; and a source electrode and a drain electrode thatare electrically coupled to the second channel layer, wherein the firstelectrical resistance is higher than the second electrical resistance.2. The transistor of claim 1, wherein: the first channel layer comprisesamorphous-Si, Ga₂O₃, GZO, or a first type of IGZO; the second channellayer comprises poly-Si, InO, ITO, SnO₂, or a first type of IGZO; andthe second type of IGZO has a higher Ga at % or a lower In at % than thefirst type of IGZO.
 3. The transistor of claim 1, wherein the sourceelectrode and drain electrode overlap opposing portions of the firstchannel layer in a vertical direction.
 4. The transistor of claim 1,wherein the first channel layer has a higher band gap than the secondchannel layer.
 5. The transistor of claim 1, wherein the first channellayer has a different threshold voltage from the second channel layer.6. The transistor of claim 1, wherein the first channel layer has ahigher Ga at % or a lower In at % than the second channel layer.
 7. Thetransistor of claim 1, further comprising a first dielectric layerdisposed on the substrate, wherein the word line is embedded in thefirst dielectric layer.
 8. The transistor of claim 7 further comprisinga second dielectric layer disposed on the second channel layer andembedding the source electrode and the drain electrode.
 9. Thetransistor of claim 1, wherein a width of the first channel layer isless than a width of the word line.
 10. The transistor of claim 9,wherein the source electrode and drain electrode overlap opposingportions of the word line, in a vertical direction perpendicular to aplane of the substrate.
 11. The transistor of claim 9, wherein a widthbetween the source electrode and drain electrode is greater than a widthof the word line.
 12. A transistor, comprising: a substrate; a word linedisposed on the substrate; a gate dielectric layer disposed on the wordline; a dual-layer channel disposed on the gate dielectric layer andcomprising: a first channel layer disposed on the gate dielectric layer;and a second channel layer comprising a semiconductor material anddisposed on the first channel layer, such that the second channel layercontacts side and top surfaces of the first channel layer; and a sourceelectrode and a drain electrode that are electrically coupled to thesecond channel layer, wherein in response to a voltage being applied tothe word line, the first channel layer has a first electrical resistanceand the second channel layer has a second electrical resistance that ishigher than the first electrical resistance, wherein the first channellayer comprises a metal or metal alloy having the first electricalresistance.
 13. The transistor of claim 12, wherein the first channellayer is configured to reduce a total resistance of an effective channelof the transistor by shortening the length of a conductive path throughthe dual-layer channel.
 14. The transistor of claim 12, wherein a widthof the first channel layer is less than a width of the word line. 15.The transistor of claim 14, wherein the source electrode and drainelectrode overlap opposing portions of the word line, in a verticaldirection perpendicular to a plane of the substrate.
 16. The transistorof claim 12, wherein the source electrode and drain electrode overlapopposing portions of the first channel layer in a vertical direction.17. The transistor of claim 16, wherein a width between the sourceelectrode and drain electrode is greater than a width of the word line.18. The transistor of claim 12, further comprising a first dielectriclayer disposed on the substrate, wherein the word line is embedded inthe first dielectric layer.
 19. The transistor of claim 18, furthercomprising a second dielectric layer disposed on the second channellayer and embedding the source electrode and the drain electrode.
 20. Amethod of forming a semiconductor device comprising: depositing a firstdielectric layer on a semiconductor substrate; forming a word line inthe first dielectric layer; depositing a gate dielectric layer over theword line; forming a dual-layer channel on the gate dielectric layer,by: depositing amorphous-Si, Ga₂O₃, GZO, or a second type of IGZO on thegate dielectric layer to form a first channel layer having a firstelectrical resistance; and depositing poly-Si, InO, ITO, SnO₂, or afirst type of IGZO on the first channel layer to form a second channellayer having a second electrical resistance that is different from thefirst electrical resistance, such that the second channel layer contactsside and top surfaces of the first channel layer, wherein the secondchannel layer comprises a semiconductor material, depositing seconddielectric layer on the second channel layer; and forming a sourceelectrode and a drain electrode in the second dielectric layer, whereinthe first type of IGZO has a lower Ga at % or a higher In at % than thesecond type of IGZO.